Tl₂N₂ is an experimental semiconductor compound composed of thallium and nitrogen, belonging to the broader class of metal nitride semiconductors under active research. This material is not widely commercialized but is of scientific interest for its potential electronic and optoelectronic properties within the nitride semiconductor family. Researchers investigate such compounds for next-generation device applications where tunable bandgaps and unique crystal structures might offer advantages over conventional semiconductors, though practical engineering adoption remains limited pending further development and characterization.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 92.79 | GPa | — | ||
Shear Modulus(G) | 35.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2939 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8730 | eV/atom | — |