Tl₂In₂S₄ is a ternary chalcogenide semiconductor compound combining thallium, indium, and sulfur. This is a research-phase material studied primarily for optoelectronic and photovoltaic applications, belonging to the broader family of layered semiconductors with potential advantages in light absorption and carrier transport. The material's layered structure and tunable band gap make it of interest for next-generation thin-film solar cells, infrared detectors, and nonlinear optical devices, though it remains largely in experimental development and has not achieved widespread commercial deployment compared to more established semiconductors like cadmium telluride or CIGS.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.56 | GPa | — | ||
Shear Modulus(G) | 23.61 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01850 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6090 | eV/atom | — |