Tl₁₂Ag₄Te₈ is a mixed-metal telluride semiconductor compound combining thallium, silver, and tellurium in a defined stoichiometric ratio. This material belongs to the family of complex chalcogenide semiconductors and is primarily investigated in research contexts for thermoelectric and optoelectronic applications where the unique band structure and carrier transport properties of multi-element telluride systems offer advantages over conventional binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03780 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2550 | eV/atom | — |