Tl1 In1 S2

semiconductor

· Tl1 In1 S2

Thallium indium disulfide (TlInS₂) is a III-V ternary chalcogenide semiconductor compound composed of thallium, indium, and sulfur. This material belongs to the family of layered semiconductors and is primarily of research interest rather than established commercial production. TlInS₂ is investigated for optoelectronic and photovoltaic applications due to its tunable bandgap and potential for nonlinear optical devices, though it remains largely in the experimental stage compared to more mature semiconductors like GaAs or CdTe.

experimental optoelectronicsnonlinear optical devicesphotovoltaic researchinfrared detectorsthin-film semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.1431	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2510	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 In1 S2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control