Tl1 As1

semiconductor

· Tl1 As1

Tl1As1 is a binary III-V semiconductor compound composed of thallium and arsenic, belonging to the family of narrow-bandgap semiconductors. This material is primarily of research and specialized industrial interest, investigated for infrared detection and optoelectronic applications where its narrow bandgap enables sensitivity to longer wavelengths than conventional semiconductors like GaAs. While less common than mainstream alternatives due to thallium's toxicity and processing challenges, TlAs remains notable in specialized detector and thermal imaging contexts where its unique electronic properties offer advantages in specific wavelength ranges.

infrared detectorsthermal imaging sensorsresearch optoelectronicsnarrow-bandgap semiconductorsspecialized photonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	39.53	GPa	—
Shear Modulus(G)	17.42	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2307	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.1730	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control