Tl0.04Te1Pb0.96

semiconductor

· Tl0.04Te1Pb0.96

Tl₀.₀₄Te₁Pb₀.₉₆ is a telluride-based semiconductor alloy, a thallium-doped lead telluride compound belonging to the IV-VI narrow bandgap semiconductor family. This material is primarily investigated for thermoelectric and infrared detector applications, where its narrow bandgap and carrier concentration characteristics enable efficient thermal-to-electric energy conversion or sensitive infrared sensing at cryogenic and moderate temperatures. While not a high-volume commercial material, lead telluride alloys are valued in specialized optoelectronic and energy-harvesting niches where other semiconductors (silicon, gallium arsenide) are unsuitable, and thallium doping is used to fine-tune electronic properties and operating temperature range.

thermoelectric generatorsinfrared detectorsthermal energy harvestingcryogenic sensingresearch semiconductorsnarrow-bandgap devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5700	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl0.04Te1Pb0.96

Electrical Properties

Regulatory Screening

Environmental

Export Control