Tl0.04Te1Pb0.96

semiconductor
· Tl0.04Te1Pb0.96

Tl₀.₀₄Te₁Pb₀.₉₆ is a telluride-based semiconductor alloy, a thallium-doped lead telluride compound belonging to the IV-VI narrow bandgap semiconductor family. This material is primarily investigated for thermoelectric and infrared detector applications, where its narrow bandgap and carrier concentration characteristics enable efficient thermal-to-electric energy conversion or sensitive infrared sensing at cryogenic and moderate temperatures. While not a high-volume commercial material, lead telluride alloys are valued in specialized optoelectronic and energy-harvesting niches where other semiconductors (silicon, gallium arsenide) are unsuitable, and thallium doping is used to fine-tune electronic properties and operating temperature range.

thermoelectric generatorsinfrared detectorsthermal energy harvestingcryogenic sensingresearch semiconductorsnarrow-bandgap devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
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Regulatory Screening

Environmental

Export Control

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