TiSnON2

semiconductor

· TiSnON2

TiSnON2 is an oxynitride ceramic compound combining titanium, tin, oxygen, and nitrogen phases, representing a mixed-valence ceramic material in the transition metal oxynitride family. This composition sits at the intersection of ternary metal oxides and nitrides, making it a research-phase material of interest for its potential electrical, optical, and structural properties. While not yet established in high-volume industrial production, materials in this family are being investigated for applications requiring tunable band gaps, enhanced hardness, or catalytic activity where the mixed anion approach provides advantages over single-phase oxides or nitrides alone.

advanced ceramics researchthin-film semiconductorsphotocatalysis applicationsfunctional coatingshigh-hardness materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	-0.0000247	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.140	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TiSnON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control