TiSnO3 is a ternary oxide semiconductor compound combining titanium, tin, and oxygen, belonging to the mixed-metal oxide ceramic family. This material is primarily of research interest for photocatalytic and optoelectronic applications, where its semiconductor bandgap and crystal structure offer potential advantages in environmental remediation and energy conversion. While not yet widely deployed in high-volume industrial production, TiSnO3 is investigated as a candidate material for visible-light photocatalysts, gas sensors, and thin-film electronic devices where the combined properties of titanium and tin oxides can be leveraged.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 182.5 | GPa | — | ||
Exfoliation Energy(Eexf) | 35.87 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 91.50 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.821 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.051 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 1.147 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 33.89 | - | — | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | — | ||
| ↳ | -1.695 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -342.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1254 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -2.316 | eV/atom | — | ||
| ↳ | 1.240 | eV/atom | — | ||
| ↳ | -2.408 | eV/atom | — |