TiS2 — Properties & Data | MatWorld

TiS2

Name: TiS2
Brand: MatWorld

semiconductor

· TiS2

Titanium disulfide (TiS2) is a layered transition metal dichalcogenide semiconductor composed of titanium and sulfur atoms arranged in a hexagonal crystal structure. The material is primarily investigated in research contexts for energy storage and intercalation chemistry applications, where its layered structure enables efficient ion insertion and extraction. TiS2 is notable as a cathode material candidate for lithium-ion and sodium-ion batteries, and also shows promise in supercapacitors and electrochemical sensing, where its two-dimensional character and tunable electronic properties offer advantages over conventional layered oxides.

lithium-ion battery cathodessodium-ion battery developmentsupercapacitor electrodeselectrochemical energy storagetwo-dimensional semiconductor researchintercalation host materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	18.36	GPa	DFT
↳	47.87	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	89.57	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2200	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	14.01	GPa	DFT
↳	34.62	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	3.224	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	1.950	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
↳	0.06500	eV	DFT · TBmBJ
↳	0.5100	eV	DFT · HSE06
Dielectric Constant (Relative Permittivity)(εr)	173.2	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	20.42	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000324	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000678	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	4.120	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	59.68	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	5.840	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.00710	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-1.420	eV/atom	DFT · OptB88vdW
↳	-1.406	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TiS2

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