Ti3 Te1 O8

semiconductor

· Ti3 Te1 O8

Ti₃Te₁O₈ is a mixed-valence titanium telluride oxide semiconductor combining titanium, tellurium, and oxygen in a complex crystal structure. This compound remains primarily a research material rather than an established commercial product, studied for its potential electronic and photocatalytic properties within the broader class of transition metal chalcogenide oxides. The material is of interest to researchers exploring novel semiconductors for optoelectronic devices, energy conversion, or catalytic applications where the mixed oxidation states and layered structure could offer tunable electronic behavior.

photocatalytic materials (research)semiconductor researchoptoelectronic device developmentenergy conversion studiesthermoelectric applications (exploratory)advanced materials characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.189	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.569	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti3 Te1 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control