Ti₂S₂ is a layered transition metal dichalcogenide semiconductor compound combining titanium and sulfur elements. This material belongs to the broader family of 2D semiconductors and is primarily investigated in research contexts for its potential in electronic and optoelectronic applications, where its layered crystal structure and semiconducting properties could enable novel device architectures. Engineers and researchers consider Ti₂S₂ for applications requiring tunable bandgaps, high electron mobility, or integration into heterostructured devices, though commercial deployment remains limited compared to more established semiconductors like MoS₂ or established silicon technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 129.2 | GPa | — | ||
Shear Modulus(G) | 66.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.318 | eV/atom | — |