Ti2 Ge2 O6

semiconductor

· Ti2 Ge2 O6

Ti₂Ge₂O₆ is a mixed-metal oxide semiconductor combining titanium and germanium in a layered crystalline structure, belonging to the family of complex oxides with potential photocatalytic and electronic applications. This is primarily a research-stage material rather than an established commercial compound; it is of interest in photocatalysis, optoelectronics, and materials science studies due to the combined electronic properties of its constituent elements and their potential for band-gap engineering. The material represents an exploratory composition within oxide semiconductor research, where titanium-germanium compounds are investigated as alternatives or complements to single-phase semiconductors for applications requiring specific optical absorption or catalytic performance.

photocatalytic materials (research)oxide semiconductorsoptoelectronic device developmentenvironmental remediation (experimental)materials science researchband-gap engineering studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.238	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.448	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti2 Ge2 O6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control