Ti₂Ga₄O₁₀ is a titanium-gallium oxide compound belonging to the mixed-metal oxide semiconductor family, typically studied as a research material for optoelectronic and photocatalytic applications. This compound is not yet established in high-volume industrial production but is investigated for its potential in photocatalysis, UV detection, and gas-sensing applications due to the combined electronic properties of titanium and gallium oxide phases. Researchers are exploring this material as an alternative or complement to conventional TiO₂ and Ga₂O₃ semiconductors, where the titanium-gallium oxide combination may offer tunable band gaps and enhanced photochemical activity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.243 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.408 | eV/atom | — |