Ti2Br6 is a layered halide semiconductor compound belonging to the family of metal bromides with potential applications in optoelectronics and photovoltaics. This material is primarily of research interest rather than established industrial production, with scientists investigating its electronic structure, light-absorption characteristics, and device potential as part of broader exploration into halide-based semiconductors for next-generation photonic and electronic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.22 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 14.69 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00290 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.235 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data