Ti₂As₄O₁₄ is a mixed-valence titanium arsenate oxide semiconductor, a rare layered compound combining titanium and arsenic in an oxidized framework. This is primarily a research-phase material studied for its semiconducting properties and crystal structure rather than an established industrial product. The arsenic-containing titanium oxide family shows potential in photocatalysis, optoelectronic devices, and solid-state chemistry applications, though Ti₂As₄O₁₄ itself remains largely unexplored outside academic investigation—making it relevant mainly to researchers developing next-generation semiconductors or exploring alternative oxide chemistries.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.673 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.780 | eV/atom | — |