Ti1 Se2

semiconductor

· Ti1 Se2

Ti1Se2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of titanium and selenium. This material is primarily investigated in research and emerging device applications rather than established industrial production, with potential value in optoelectronic and electronic devices that exploit its layered crystal structure and tunable band gap properties. The material family is notable for strong light-matter interactions and mechanical flexibility, offering advantages over conventional semiconductors in flexible electronics, photovoltaics, and sensor applications where traditional brittle materials would be impractical.

flexible electronicsoptoelectronic devicesphotovoltaic researchgas sensing applicationstwo-dimensional material researchnanoelectronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	41.40	GPa	—
Shear Modulus(G)	27.56	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00440	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.163	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 Se2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control