Ti1 S2

semiconductor

· Ti1 S2

Ti1S2 is a layered transition metal dichalcogenide (TMD) semiconductor composed of titanium and sulfur in a 1:2 stoichiometric ratio. This material is primarily of research and developmental interest, studied for its potential in next-generation optoelectronic and electronic devices, including thin-film transistors, photodetectors, and energy storage applications. Ti1S2 belongs to a broader family of 2D materials that offer tunable electronic properties and the potential for integration into flexible and atomically-thin device architectures, making it relevant to emerging technologies rather than established high-volume industrial applications.

thin-film transistorsphotodetectorsoptoelectronic devicesenergy storage and batteries2D semiconductor researchflexible electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	42.86	GPa	—
Shear Modulus(G)	24.53	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00610	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.395	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ti1 S2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control