Ti1Nb2Se4 is a ternary transition metal selenide compound combining titanium, niobium, and selenium in a layered or complex crystal structure. This is a research-stage semiconductor material under investigation for its electronic and thermal properties, belonging to the broader family of transition metal chalcogenides that have shown promise in energy conversion and quantum materials applications. The material's potential derives from its mixed-valence metal framework and selenium bonding, which can enable tunable band gaps and enhanced carrier mobility compared to binary selenides, making it of interest for next-generation thermoelectric, photovoltaic, or topological electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 90.23 | GPa | — | ||
Shear Modulus(G) | 52.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00950 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9800 | eV/atom | — |