Th2GeSe2 is a thorium-based ternary semiconductor compound combining thorium, germanium, and selenium in a layered crystal structure. This is a research-phase material primarily explored for its potential in thermoelectric energy conversion and optoelectronic devices, offering the possibility of tunable bandgap and strong spin-orbit coupling effects typical of heavy-element semiconductors. The material belongs to the broader class of mixed-metal chalcogenides being investigated as alternatives to conventional semiconductors, with potential advantages in high-temperature applications and radiation-tolerant environments due to thorium's nuclear properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.980 | eV | — |