TePbO3 is a lead tellurite oxide semiconductor compound that combines tellurium and lead in an oxide structure, belonging to the broader family of mixed-metal oxide semiconductors. This material is primarily of research interest for optoelectronic and photonic applications, where its semiconductor properties and potential nonlinear optical characteristics are being explored. While not yet established in high-volume industrial production, TePbO3 represents part of the ongoing investigation into heavy-metal oxide systems for infrared sensing, photovoltaic devices, and specialized optical materials where conventional semiconductors reach their functional limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.345 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.710 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
| ↳ | 2.787 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 25.26 | - | — | ||
Magnetic Moment(μB)2 entries | 0.000298 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1178 | C/m² | — | ||
Seebeck Coefficient(S) | -163.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.353 | eV/atom | — | ||
| ↳ | 1.180 | eV/atom | — | ||
| ↳ | -1.240 | eV/atom | — |