TeInN3 — Properties & Data | MatWorld

TeInN3

ceramic

· TeInN3

TeInN3 is an experimental ternary nitride ceramic compound combining tellurium, indium, and nitrogen elements. This material belongs to the broader family of wide-bandgap semiconductors and nitride ceramics currently under investigation for advanced electronic and optoelectronic applications. Research interest in this composition focuses on potential use in high-temperature electronics, photovoltaics, and optoelectronic devices where thermal stability and electrical properties of nitride systems offer advantages over conventional alternatives.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronic research materialsexperimental compound developmentthin-film applicationsnitride ceramic systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.824	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.260	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental