TeBaN3 is an experimental ceramic compound in the boron-nitrogen system with tellurium incorporation, representing research into wide-bandgap semiconductor and refractory ceramic materials. While not yet commercialized, this material family is being investigated for potential applications in high-temperature electronics, neutron shielding, and advanced optical devices where extreme thermal stability and radiation resistance are critical. Engineers should note this is primarily a research-phase material; its industrial viability and property advantages relative to established alternatives like hexagonal boron nitride or aluminum nitride remain under evaluation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.141 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.180 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data