TeAsN3 — Properties & Data | MatWorld

TeAsN3

ceramic

· TeAsN3

TeAsN₃ is an experimental ternary ceramic compound combining tellurium, arsenic, and nitrogen—a rare combination not yet widely commercialized. This material exists primarily in the research domain, where scientists investigate its potential as a wide-bandgap semiconductor or functional ceramic; the nitrogen-rich composition suggests possible applications in advanced electronic or photonic devices, though its toxicity profile (arsenic content) and synthesis challenges currently limit industrial deployment.

research ceramicswide-bandgap semiconductorsexperimental photonicshigh-temperature electronics (exploratory)materials science development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.00994	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.700	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TeAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental