TeAs is a binary III-V semiconductor compound composed of tellurium and arsenic, belonging to the same material family as gallium arsenide and indium phosphide. While primarily of research interest rather than a mature commercial material, TeAs is investigated for narrow-bandgap semiconductor applications and infrared optoelectronics, where its properties may enable detection or emission in specific wavelength ranges. Engineers considering this material should note it remains largely in the experimental phase; conventional III-V semiconductors (GaAs, InP, InSb) typically dominate commercial infrared and photonic device markets due to established fabrication infrastructure and proven reliability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.339 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.7400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1055 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.09621 | eV/atom | — |