Te9 As6

semiconductor
· Te9 As6

Te9As6 is a tellurium-arsenic compound semiconductor belonging to the chalcogenide family, combining group VI (tellurium) and group V (arsenic) elements to form a narrow-bandgap material. This composition is primarily investigated in research contexts for infrared detection and thermal imaging applications, where its narrow bandgap enables sensitivity in the mid-to-long wavelength infrared range—a capability difficult to achieve with conventional silicon or germanium detectors. The material represents an alternative to more common binary compounds (like PbTe or InSb) and offers potential advantages in specialized sensing systems where cost, thermal stability, or specific spectral response windows are critical design drivers.

infrared detectorsthermal imaging sensorsresearch semiconductorsnarrow-bandgap optoelectronicsspectroscopy applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.