Te4As2I2O is an inorganic ceramic compound containing tellurium, arsenic, iodine, and oxygen—a mixed-halide telluride oxide that represents research-level materials chemistry rather than an established commercial ceramic. This composition falls within the family of chalcogenide and halide-based ceramics being investigated for photonic, thermoelectric, and solid-state electronic applications where unconventional element combinations enable specific functional properties. Such materials are typically evaluated in academic and advanced materials research contexts for potential use in next-generation semiconductors, optical devices, or energy conversion systems where traditional oxides are insufficient.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13.48 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 7.870 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.128 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3830 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 17.82 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2409 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.05428 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data