Te₄As₄H₄O₂₀ is an oxygenated tellurium-arsenic hydride compound that functions as a semiconductor material, likely of interest in solid-state chemistry and materials research rather than mainstream industrial production. This compound belongs to the family of mixed-valence chalcogenide semiconductors and represents exploratory chemistry in the tellurium-arsenic system; such materials are typically investigated for their electronic band structure, photoconductivity, or potential optoelectronic properties rather than for established high-volume applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.165 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.107 | eV/atom | — |