Te2Mo3W1Se4S2 is a mixed-metal chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, selenium, and sulfur. This is a research-phase material within the transition metal chalcogenide family, explored for its potential in optoelectronic and photovoltaic applications where multi-element composition can engineer band gaps and carrier transport. The material family is notable for tunable electronic properties and potential use in environments requiring moderate stiffness with semiconductor behavior, though practical commercial applications remain limited to experimental prototypes.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.27 | GPa | — | ||
Shear Modulus(G) | 23.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2126 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5240 | eV/atom | — |