Te₂Mo₃S₄ is a mixed-metal chalcogenide semiconductor compound combining tellurium, molybdenum, and sulfur in a single-phase structure. This material is primarily of research and developmental interest in advanced electronics and photovoltaic applications, where layered chalcogenides are explored for their tunable band gaps, anisotropic transport properties, and potential in next-generation thin-film devices. While not yet in widespread industrial production, compounds in this family are investigated as alternatives to conventional semiconductors in niche applications requiring specific optical or electronic behavior at reduced dimensionality.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 34.29 | GPa | — | ||
Shear Modulus(G) | 19.81 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08090 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6210 | eV/atom | — |