Te2 Mo1 W3 Se2 S4
semiconductorTe₂Mo₁W₃Se₂S₄ is a mixed-chalcogenide semiconductor compound combining tellurium, molybdenum, tungsten, selenium, and sulfur in a layered structure. This is a research-phase material belonging to the transition metal chalcogenide family, designed to explore tunable electronic and optoelectronic properties through compositional engineering of multiple chalcogen and metal sites. The material's potential lies in next-generation thin-film photovoltaics, thermoelectric devices, and 2D electronic applications where the deliberate mixing of heavy (Te) and lighter (S, Se) chalcogens alongside multiple transition metals (Mo, W) offers flexibility in band-gap tuning and charge-carrier mobility that single-component or binary semiconductors cannot easily match.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |