Te12Er8 is a tellurium-erbium compound semiconductor, likely in the rare-earth telluride family. This material represents experimental research into rare-earth semiconductor systems, which are investigated for thermoelectric, infrared optoelectronic, and quantum applications where erbium's unique electronic and optical properties can be leveraged in a tellurium host lattice.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05910 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.428 | eV/atom | — |