Te1 Pd1 O3

semiconductor

· Te1 Pd1 O3

Te₁Pd₁O₃ is a mixed-valence oxide semiconductor combining tellurium, palladium, and oxygen in a defined stoichiometric ratio. This is a research-phase compound studied primarily for its electronic and catalytic properties, belonging to the broader family of transition metal tellurium oxides with potential applications in advanced functional materials. The palladium-tellurium-oxygen system is of interest for its potential redox activity and mixed ionic-electronic conductivity, though industrial adoption remains limited and the material is primarily encountered in materials science research rather than established engineering applications.

catalytic materials researchsemiconductor thin filmsredox-active oxidesmixed-valence compoundsmaterials science experimentationelectrochemical applications (exploratory)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.03300	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Te1 Pd1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control