Te1H6O6 is an experimental hydrogen-rich tellurium oxide compound classified as a semiconductor material. This composition represents a research-phase material within the tellurium oxide family, where hydrogen incorporation is being explored to modify electronic and structural properties for potential device applications. Materials in this chemical family are investigated for their tunable band gaps and potential use in optoelectronic and photovoltaic applications where tellurium compounds offer advantages in light absorption and charge carrier transport.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.40 range 34.08–40.72median of 2 measurements | GPa | — | ||
Shear Modulus(G) | 21.99 range 21.65–22.33median of 2 measurements | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.390 range 2.125–2.656median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9225 range -0.9570–-0.8880median of 2 measurements | eV/atom | — |