BaTe (barium telluride) is an intermetallic semiconductor compound belonging to the II-VI semiconductor family, characterized by ionic bonding between barium and tellurium elements. This material is primarily of research and development interest for thermoelectric applications, where it is investigated for solid-state heat-to-electricity conversion and thermal management systems; it may also find use in specialized optoelectronic or infrared detector applications. BaTe represents an emerging material system rather than a widely deployed commercial product, with potential advantages in niche high-temperature thermoelectric or wide-bandgap semiconductor roles where conventional materials face limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 31.47 | GPa | — | ||
Shear Modulus(G) | 20.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.605 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.883 | eV/atom | — |