TcSnO3

semiconductor

· TcSnO3

TcSnO3 is an experimental ternary oxide semiconductor combining technetium, tin, and oxygen—a research-phase compound being investigated for its potential electronic and photocatalytic properties. While not yet in commercial production, materials in this perovskite-related oxide family are of interest to researchers exploring next-generation semiconductors for energy conversion, catalysis, and optoelectronic applications where alternative tin oxides or mixed-metal oxides may prove limiting. Engineers and materials scientists should treat this as a laboratory compound requiring further characterization before practical deployment.

photocatalysis researchexperimental semiconductorsenergy conversion devicesmixed-metal oxide systemsmaterials physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.5710	eV	—
Magnetic Moment(μB)	1.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TcSnO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control