Tc4 O12 F4

semiconductor

· Tc4 O12 F4

Tc4O12F4 is a mixed-valence transition metal oxide fluoride semiconductor compound containing titanium. This material represents an emerging class of hybrid anionic semiconductors being explored in research contexts for its potential to combine the electronic properties of oxides with the chemical stability of fluorides. The fluorine substitution can significantly alter band gap engineering and ionic conductivity compared to conventional metal oxides, making it of interest for next-generation functional materials.

experimental semiconductorsband gap engineering researchionic conductorssolid-state electrolytesphotocatalytic applicationsadvanced ceramics development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	24.89	GPa	—
Shear Modulus(G)	16.75	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.574	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.637	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tc4 O12 F4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control