TbInO3

semiconductor

· TbInO3

TbInO3 is a rare-earth indium oxide compound belonging to the family of perovskite-based semiconductors, combining terbium (a lanthanide) with indium oxide to form a ternary ceramic material. This is an experimental/research compound with potential applications in optoelectronics and photonic devices, where the rare-earth dopant (Tb) can provide luminescent or magnetic functionality while the indium oxide framework offers semiconductor properties. The material is of interest in specialized research contexts for photocatalysis, transparent electronics, or next-generation semiconductor heterostructures, though it has not achieved widespread industrial adoption.

rare-earth photocatalystsoptoelectronic researchtransparent semiconductor filmsphosphor materialsthin-film device researchadvanced ceramics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.737	eV	—
Magnetic Moment(μB)	0.000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.046	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TbInO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control