Tb₆Si₄S₁₆I₂ is a rare-earth chalcohalide semiconductor compound combining terbium, silicon, sulfur, and iodine. This is an experimental material primarily of research interest rather than an established industrial compound; it belongs to the family of rare-earth sulfide-halide semiconductors being investigated for optoelectronic and photonic applications where the rare-earth dopant can contribute luminescent properties. The combination of rare-earth elements with chalcogenide and halide chemistry offers potential for tunable bandgap and emission characteristics in solid-state lighting and quantum dot applications, though practical engineering adoption remains limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.459 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.518 | eV/atom | — |