Tb₄B₄S₁₂ is a rare-earth boron sulfide compound belonging to the family of ternary chalcogenides, combining terbium (a lanthanide), boron, and sulfur. This material is primarily of research interest rather than established industrial use, with potential applications in wide-bandgap semiconductors and solid-state devices where rare-earth doping can provide unique optical or magnetic properties. The combination of boron and sulfur chemistry offers theoretical advantages for photonic and electronic applications in specialized environments, though commercial adoption remains limited compared to more conventional semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.52 | GPa | — | ||
Shear Modulus(G) | 32.85 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.424 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.367 | eV/atom | — |