Tb2 K2 Ge2 S8

semiconductor

· Tb2 K2 Ge2 S8

Tb2K2Ge2S8 is a layered quaternary chalcogenide semiconductor composed of terbium, potassium, germanium, and sulfur. This is a research-phase compound studied for its potential in solid-state electronics and photonics applications, particularly within the family of metal-chalcogenide semiconductors known for tunable bandgaps and anisotropic transport properties. The material's layered structure and rare-earth dopant (terbium) make it a candidate for thermoelectric conversion, optical sensing, and emerging quantum device architectures where chemical composition enables property engineering.

solid-state research devicesthermoelectric materialsoptical sensors and photonicsrare-earth semiconductor studiesmaterials physics experimentationquantum electronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	29.82	GPa	—
Shear Modulus(G)	17.99	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.325	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.367	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb2 K2 Ge2 S8

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control