Tb₂Ga₂I₂ is a rare-earth gallium iodide compound belonging to the family of ternary halide semiconductors, combining terbium (rare-earth element), gallium, and iodine. This material is primarily of research interest for optoelectronic and photonic applications, particularly where rare-earth luminescence or specific bandgap characteristics are needed; it represents an emerging class of materials being investigated for potential use in scintillators, photoluminescent devices, and solid-state lighting applications where rare-earth doping or host matrices offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01270 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.079 | eV/atom | — |