Tb10 Ge6

semiconductor

· Tb10 Ge6

Tb10Ge6 is a rare-earth intermetallic compound composed of terbium and germanium, belonging to the family of lanthanide-based semiconducting materials. This compound is primarily of research interest for studying electronic and magnetic properties in rare-earth systems rather than established commercial use. The material exemplifies the potential of rare-earth germanides for advanced applications in thermoelectrics, magnetic devices, and quantum materials, though it remains largely in the experimental phase.

thermoelectric researchrare-earth semiconductorsmagnetic materials developmentquantum material studiessolid-state physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00530	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tb10 Ge6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control