Tb(InS2)3 is a rare-earth indium sulfide compound semiconductor composed of terbium and indium disulfide units, representing a niche material in the thiospinel or layered chalcogenide family. This is primarily a research compound rather than a mature industrial material, investigated for its potential optoelectronic and photovoltaic properties arising from the combination of rare-earth and transition-metal sulfide chemistry. Interest in this material class stems from tunable bandgaps, strong light-matter coupling, and the potential for next-generation thin-film photovoltaics, though practical device-level applications and manufacturing scale-up remain limited compared to conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.200 | eV | — |