TaTlS₃ is a ternary chalcogenide semiconductor compound containing tantalum, thallium, and sulfur. This material represents an emerging research compound within the layered chalcogenide family, investigated primarily for its electronic and optoelectronic properties in laboratory and exploratory device contexts. Interest in TaTlS₃ stems from its potential for applications where tunable band structure, anisotropic transport, or strong light-matter coupling could provide advantages over conventional semiconductors, though it remains largely in the research phase without widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.788 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.7800 | eV | — | ||
| ↳ | 0.5280 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9094 | eV/atom | — |