Tantalum nitride (TaN) is a ceramic compound semiconductor formed from tantalum and nitrogen, valued for its high hardness, chemical stability, and thermal properties. It is primarily used in thin-film applications including diffusion barriers in microelectronics, hard protective coatings, and wear-resistant surfaces; engineers select it over alternatives like TiN when superior corrosion resistance or specific thermal characteristics are required. The material is also investigated in research contexts for advanced metallization in semiconductor devices and as a component in multiphase coatings for extreme-environment applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 337.7 | GPa | — | ||
| ↳ | 335.1 | GPa | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G)2 entries | 238.1 | GPa | — | ||
| ↳ | 146.8 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 14.93 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.300 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 28.05 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 1.529 | C/m² | — | ||
Seebeck Coefficient(S) | -0.5400 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3344 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.307 | eV/atom | — | ||
| ↳ | -0.9862 | eV/atom | — |