TaGeAs is a ternary ceramic compound combining tantalum, germanium, and arsenic elements, representing an experimental material within the broader family of refractory and semiconductor ceramics. This compound has been investigated in materials research for potential applications requiring high thermal stability and specific electronic or photonic properties, though industrial deployment remains limited. The material's notable density and stiffness characteristics position it as a candidate for specialized applications where conventional ceramics or semiconductors may be inadequate, though practical availability and processing methods remain active research areas.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 100.4 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2200 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 4.940 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.889 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.045 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.7098 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data