TaGaS2

semiconductor

· TaGaS2

TaGaS₂ is a ternary semiconductor compound composed of tantalum, gallium, and sulfur, belonging to the family of layered chalcogenide semiconductors. This material is primarily of research and development interest for optoelectronic and photonic applications, where its direct bandgap and layered crystal structure offer potential advantages in photodetection, light emission, and energy conversion devices. TaGaS₂ represents an emerging alternative to more widely studied two-dimensional semiconductors, with particular promise in heterostructure engineering and integrated photonic circuits where tunable electronic and optical properties are required.

photodetectorsoptoelectronic devices2D semiconductor heterostructuresphotovoltaic researchlight-emitting applicationsnext-generation electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.460	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TaGaS2

Electrical Properties

Regulatory Screening

Environmental

Export Control