TaGaNi2 is an intermetallic compound combining tantalum, gallium, and nickel, belonging to the family of ternary metallic systems. This is a research-phase material studied primarily for its potential in high-temperature structural applications and electronic device components where the combination of refractory (tantalum) and semiconducting (gallium) elements may offer unique property synergies. Engineers would consider this compound in advanced materials development programs targeting extreme environments or functional electronics, though practical applications remain largely experimental and material availability is limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 195.3 | GPa | — | ||
Poisson's Ratio(ν) | 0.4100 | - | — | ||
Shear Modulus(G) | 52.22 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 11.48 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 4.420 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00860 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3450 | eV/atom | — |