TaBaO3 — Properties & Data | MatWorld

TaBaO3

semiconductor

· TaBaO3

TaBaO3 is a mixed-metal oxide ceramic compound containing tantalum and barium, belonging to the perovskite or perovskite-related oxide family. This material is primarily investigated in research contexts for applications requiring high-temperature stability, ferroelectric properties, or dielectric performance. It remains largely experimental rather than widely commercialized, with potential relevance to advanced ceramics, electronic component design, and photocatalytic research where tantalum-bearing oxides are explored as alternatives to more conventional perovskites.

high-temperature ceramics (research)dielectric materialsferroelectric devices (experimental)photocatalysis applicationsadvanced oxide electronicsthin-film deposition research

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.3040	eV	DFT · PBE
↳	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)2 entries	-0.00100	μB	DFT
↳	0.3241	μB	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-2.791	eV/atom	DFT
↳	1.860	eV/atom	DFT

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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TaBaO3

Electrical Properties

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