TaAsN₃ is a ternary ceramic compound combining tantalum, arsenic, and nitrogen—a research-phase material belonging to the refractory nitride family. This compound is primarily of academic and exploratory interest for ultra-high-temperature applications and semiconductor research, where its combination of metallic and covalent bonding may offer thermal stability and electronic properties not achievable in conventional binary nitrides or arsenides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.00116 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.540 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data